Random access memory is used to store synaptic information in the form of a matrix of rows and columns of binary digits. N rows read in sequence are processed through switches and resistors, and a summing amplifier to N neural amplifiers in sequence, one row for each amplifier, using a first array of sample-and-hold devices S/H1 for commutation. The outputs of the neural amplifiers are stored in a second array of sample-and-hold devices S/H2 so that after N rows are processed, all of said second array of sample-and-hold devices are updated. A second memory may be added for binary values of 0 and -1, and processed simultaneously with the first to provide for values of 1, 0, and -1, the results of which are combined in a difference amplifier
