Fabrication and characterization of high-efficiency metal insulator, n-p (MINP) cells is described. Particular attention was paid to development of measurement methods for surface recombination and density of surface states. A modified Rosier test structure was used successfully for density of surface states. Silicon oxide and silicon nitride passivants were studied. Heat treatment after plasma enhanced chemical vapor deposition (CVD) of silicon nitride was shown to be beneficial. A more optimum emitter concentration profile was modeled
