Progress on the development of a high efficiency module is described. The effort includes development of high efficiency cells using crystalline silicon wafers from float zone silicon. Module-size cells, 53 sq cm in area, were fabricated with efficiency of 18%. Operating temperature reduction is also studied

Spitzer, M. B.

English

NASA Technical Reports Server

MODULE DEVELORAENT AND ENGINEERING SCIENCES _' 8 " £ 9 4 ()O 7'
HIGH-EFFICIENCY MODULE DESIGN
SPIRE CORP.
M.B. Spitzer ,_
Principal Results
• FABRICATEDMODULE WITH HIGH
SUB-BANDGAPREFLECTMTY AND
EFFICENCY OF 13.7%.
• FABRICATEDLARGE-AREA CELLS
WITH EFFICIENCYOVER 18%.
Objectives
• FABRICATIONOF MODULES WITH EMPHASIS
ON REDUCED OPERATINGTEMPERATURE. i
| • FABRICATIONOF HIGHLYEFFICIENTMODULES. " '
¢
• EVALUATIONOF POSSIBLE TRADE-OFF
BETWEEN HIGH EFFICIENCY AND LOW NOCT.
!
_t
PRECEDINGPAGEBLAHKNOT FILM=J:)
623
J. °
1986019875-604
https://ntrs.nasa.gov/search.jsp?R=19860019928 2020-03-23T07:34:39+00:00Z
' MODULE DEVELOPMENT AND ENGINEERING SCIENCES
t
Cell Design
TI02 TI-Pd-Ag 4
SiO2
3_ ,
AI-Ti-Pd-Ag
• AI USED FOR BSR
• 8102 USED TO PASSWATE SURFACE
• p  SIMPLEOHMIC CONTACT (NOT BSF)
• NO EDGE PASSIVATION USED
I00
CELL 4SI I-9
•_, 90 AREA-53¢m2
WITH B6R, ARCOATING
80 ANOI[NCAPSULATION _
• 70
!'°L,oI UNUSABLE
o l
400 600 800 1000 1200 1400 1600 1800
WAVELENGTH (nonometers)
"i
':_ 624
®,i
----,,• v _ ,,
1986019875-605
?
' MODULE DEVELOPMENT AND ENGINEERING SCIENCES (-
_,
__ Assembly Performance
t
J
:; (AMI.5, 100 mW/cm 2, T= 25"C) °
Tested by JPL
Elf =17.1%
Voc =611 mV
Jsc = 34 mA/cm 2
FF =82.5%
AREA -53.04 cm2
2.5 "_
!
2.0 1
. CURRENT !
(amps) 1.5
i
!
1.0 !
1 ;
_ 0.5
t
iI I I I I
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VOLTAGE
._ -°.
,r,, _. 625 ;
___.__ __ .......: &
1986019875-606
MODULE DEVELOPMENT AND ENGINEERING SCIENCES ]{
Module Circuit and Mismatch Loss
- *_----E3-- 1.62,, ---..
.+
" --" _'--___ ." _ 1.63-"1.64A ------
.t
_ ..--Kt-- 1._--1.65A--
' t
_.. _ 1.66--..I.67,,,-- .,+
,_; Imp OF EACH CELLWITHIN
; 1% OF THE STRING AVERAGE. _
"t
,; ALL STRINGS HAVE _Vmp
' of 6.053+.001 mV. AVE. Eft - 15.4%
.I
1
!!
!
'- ®/.
'_'_T2,.:...... " ,r ......
1986019875-607
• F_EDLK_"UHK_'_ESS,AA,_D_C_ P,_SS_
-_IELDS
_ PRE(_SE _
(
/,
•-.C,FFERS _ E_Y i
:t
627 ,._, ;
'- .....7 _;i._:" - _ "_
1986019875-608
W.!
MODULE DEVELOPMENT AND ENGINEERING SCIENCES _(
ioo
POLISHEDBACKWITH8102,..,_ " . ..... _ . ._.. --. I
..,..- -
POLISHEDBACK
80
7O
60 / ETCHEDBACK
= //" O
z /
_ so
W ,
- !IL .1
m 40 :
" i' FRONTSPOUSHED
' , / ANOAR-'COATED
-' _ i I AiONSACKS
20
m
" I0 •
• ' ' • | I I i
900 I000 I100 1200 1300 1400 1500 1600 1700 1800
•
WAVELENGTH(nanometers) .',
r
l
628
®/;
1986019875-609
MODULE DEVELOPMENT AND ENGINEERING SCIENCES
IOO
FRONTSTEXTURED
90 AND AR-COATE.O
._, AI ON BACK_ ,
m 80
I
'L 70
/
t
"." 60
uJ
0
Z
0
it.
": m 40
POLISHEDBACK30
fo _
I ETCHEDBACK
20 ;
TEXTUREDBACK ..... f
Io
=.._°
0 ' * I I I, I J --
900 I000 I100 1200 1300 1400 1500 1600 1700 1800
WAVELENGTH(nanometers) ..
i
r ,,¢ 629
1986019875-610
MODULE DEVELOPMENT AND ENGINEERING SCIENCES .!
jt
5o
_ CELL 4626-3
4
i
4(3--
AREA=53.04 cm 2
Voc-611 mV
3(: -- Jsc = 38.0mAlcm 2
FF=78.1%
Eft- 18.2%
E
o
<
E
I-
z
uJ
n- 20 -- INSOLATION: AMl,100mW/cm2,T,,28°C
O
.'
10-- '.
'f
o._ o.= o.3 o.4 o.5 o.s o.7
VOLTR
63O
®,
1986019875-611
_' MODULEDEVELOPMENTAND ENGINEERINGSCIEh;CES
._
k ;
Furnace-Annealed Texture-Etched Larg_-Area Cells
+
f
_, VOC Isc Jsc ,, FF Eft
: tV) (A) mA/cm= (%) (%)
0.6i0 2'00! 372 77.5 17.8
0.=J11 2.018 38.G 78.l 182
0.606 1.91_ 37.++ 77.5 1.7.6
+ 0.602 i 3.t3 36.5 78.1 17.1
t 0.610 2016 38,0 78.1.1 ! 8.2
.+.: 0.6_, i._ _. i 772 i 7.4
' 0.610 2.011 37.9 777 18.0
0.6O9 2.0_8 382 77.5 1&1
0.609 2.014 38,0 76,5 17.7
0.609 2,0!3 38.0 77.9 1&0
0.611 2'r,_6 382 77.8 182
0.(_6 1.96q 37.0 77.8 17.5
; _ 0.608 1.985 37.q 76.9 17.5 ; _
" + 0.6O7 2.018 38.0 762 i 7._¢ + ,
0.611 2.033 38,3 77.4 18.1 !
0,6_ 1.980 37.3 77,q t7,5 :
; ! 0"6L_ 2.(:_ 38.i 77.5 18,0 ",
" 0._,._ 2.011 _.9 78.3 18.1 _
0,610 2.029 382 77.0 18.0 i
0.607 1.9Bq 37.q 77.5 17.6 _'
0.601 1.930 36.q 76.6 16,7
0.603 1._.S_-8 ._._ 762 17.0
¢
0.608 1,997 37.6 T/.q 17.7
0,003 0,031 0.6 0,6 0.q ' i
, NOTES: AREA-53cm2, T-28 C. IN3OLATION "
-_ WAS SIMULATED AM 1. loOmWlcm -?. "_
Projections for Module Made of Texture-Etched Cells
' POLISHEDCELLS TEXTLREDCELLS
(ACTUAL) (PROJECTEC_
•+ AVERAGECELL 15.4% 17.7%
EFFICIENCY
PACKINGFACTOR 13.9% +5.9t,¢
,_ (90_
INTERCONNECT 13.7% 15.7%LOSSES
-- (1.4%1 ;;+
1986019875-612
MODULE DEVELOPMENT AND ENGINEERING SCIENCES
Conclusions
• BSR CELLS OFFER HIGH REFLECTIONOF
SUB-BANDGAPPHOTONS. i
• ENCAPSULATEDCELL EFFICIENCY OF 17.1%
HAS BEEN ACHEVED, WITH A 53cm"2 CELL
•(MEASURED AT JPL).
• MODULE EFFICIENCY OF 13.7% HAS BEEN
ACHIEVED, NOCT IS 45°C (MEASURED AT JPL).
• TEXTURED CELL E,:FICIENCY OF 18.2% HAS
BEEN ACHIEVEDWITH A 53cm2 CELL.
• MODLIL,. "FFICIENCY GREATERTHAN 15% IS
=_PALI_TIC,N THE VERY NEAR FUTURE.
,=i
:, 632
___L=.. _ ,4,, .. . _ ,
1986019875-613


High-efficiency module design

Abstract

Similar works

Full text

Available Versions

NASA Technical Reports Server