Temperature-stress modeling for silicon dendritic web growth is described. Temperature/stress fields near growth front are examined. The effects of lateral temperature gradients are also explored

Seidensticker, R. G.

English

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TEMPERATURE-STRESS MODELING 
WESTINGHOUSE ELECTRIC CORP. 
R. Seidensticker 
Overall Goals 
Current Work 
r Tmperat~rtt/SLress Fields near Growth Front 
r Effects of Lateral Temperature Gradier-ts 
PRECEDING PAGE BLANK NOT FlLMED 
https://ntrs.nasa.gov/search.jsp?R=19850024123 2020-03-22T19:48:37+00:00Z
\ 
. . 
4 
SII-ICON SHEET 
QR\G~N AL Pi.\,- ,- SILICON SHEET 
OF. POOR  QUA^'^' 
Dependence of oy at Interface on AIB; w = 1.35 cm 
Stress Fields at Growth Front 
Model Representation 
A T(x) = -f exp(-Ox)+ i .: + D 
B 
Results: 
Stress fields depend on A ana r, 
but nnt on C and D 
SILICON SHEET 
,i 
Lateral Temperature Varjation 
W i t h  Dr. I?. f: Sckcrks 
Causes: 
1 .  Variation in thermal environment 
across width of web 
2. Variation in cross section across 
width of web 
Model i ~ g  Representation 
where w = rihbon half width 
c , B 0 concave upward (smiling) 
c < (I concave downward (frowning) 
n = 2 quaoratic case 
n = 4 quartic case 
Interface Shape for Curved Isotherms 
SILICON SWEET 

SILICON SHEET 
, I  
r 
, . SILICON SHEET 
Symmdric 
Buckling 
- 
C 2 <  0 - 
- 
C 4 < O -  
- 
ci=0 - 
c,> 0 
- 
c2>o - 
- 
Antisymmetric 
Buckling 
Lateral Temperature Variation: Summary 
'Frowning' Isotherms: 
Inhibit buckling 
Should not affect residual stresses 
The J460L configuration has been modified t o  
produce more frowning* isotherms in the web 


Temperature-stress modeling

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