New fundamental technique of reliability prediction for semiconductor diodes based on realistic mathematical models can be applied to component failure rate prediction including mechanical degradation, electrical degradation, environmental stress factors, and electrical load stress factors

Ryerson, C. M.

English

NASA Technical Reports Server

December 1967
	 Brief 67-10651 
NASA Tech Briefs are issued to summarize specific innovations derived from the U.S. space program, 
to encourage their commercial application. Copies are available to the public at 15 cents each 
from the Clearinghouse for Federal Scientific and Technical Information, Springfield, Virginia 22151. 
Development of Reliability Prediction Technique

for Semiconductor Diodes 
A project was initiated to develop a new and more 
fundamental approach to reliability prediction for 
semiconductor diodes based on realistic mathemati-
cal models. The hope was to achieve a breakthrough 
from the theoretical side using a knowledge of the 
basic physics and mathematics to provide a bridge of 
rationale and technique for scientific guidance of 
reliability prediction. 
The art of failure prediction has been based largely 
on empirical data and routine application of the 
Inverse Product Rule. Although much has been 
learned in recent years about the Physics of Failure in 
component parts, there has been little or no theoreti-
cal means for making use of this information in fail-
ure rate prediction. There has been no "law" of 
failure for prediction purposes. It is believed that this 
desired "law" has now been developed. 
To limit the scope of the project to a practical range, 
the field effort was centered on semiconductor diodes 
in general, on silicon diodes primarily, and on live 
typical types for detailed analysis. These five basic 
types are: 
(I) General purpose 
(2) Computer and switching 
(3) Zener or reference 
(4) Power or rectifier 
(5) Varactor (variable reactance) 
The following parameters were included: 
(I) Mechanical degradation (gross physical-macro-
structure) 
(2) Electrical degradation (chemical-microstruc-
ture)
(3) Environmental stress factors 
Shock 
Constant acceleration 
Temperature (operating, junction) 
Radiation (particulate. nonparticulate) 
(4) Electrical load stress factors 
Current 
Power 
Voltage 
(5) Quality adjustment factor 
Notes: 
I. Some of the uses of the failure prediction "law" 
may be summarized as follows: 
(a)To determine whether a lot of parts is typical 
of the standard part. 
(b)To establish a new model for similar but dif-
ferent types 
(c) To evaluate the differences between supposedly 
identical lots 
(d) To compare products from different suppliers 
(e) To evaluate consistency of quality control in a 
supplier's plant from lot to lot 
(f) To compare the effectiveness of quality control 
between suppliers for the same type parts 
(g) To establish new constants and models for dif-
ferent part types 
(h) To purify and perfect the model to deeper levels 
of interaction simulation 
. Although the project emphasized specific applica-
tion to certain types of silicon diodes, the technical 
approach developed should be useful with all other 
types of components including integrated microcir-
cuits.
(Continued overleaf) 
This document was prepared under the sponsorship of the National 
Aeronautics and Space Administration. Neither the United States 
Government nor any person acting on behalf of the United States
Government assumes any liability resulting from the use of the 
information contained in this document, or warrants that such use 
will be free from privately owned rights.
https://ntrs.nasa.gov/search.jsp?R=19670000650 2020-03-11T21:40:11+00:00Z
3. Complete details of this development are contained 
in: Project Diode Reliability Prediction Tech-
nique", by C. M. Ryerson, NASA CR-702, Hughes 
Aircraft Company, February 1967. Copies of this 
report are for sale by the Clearinghouse for Federal 
Scientific and Technical Informatibn, Springfield, 
Virginia 22151; price $2.50. 
4. Inquiries concerning this development may be di-
rected to:
Technology Utilization Officer 
Goddard Space Flight Center 
Greenbelt, Maryland 20771 
Reference: B67-10651
Patent status: 
Inquiries about obtaining rights for the commercial 
use of this invention may be made to NASA, Code 
GP, Washington, D.C. 20546.
Source: C. M. Ryerson

of Hughes Aircraft Company

under contract to

Goddard Space Flight Center

(GSC-10231) 
Brief 67-10651	 Category 06


Development of reliability prediction technique for semiconductor diodes

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