Process produces linearly responding surface barrier diodes. Hydrogen-fired, conducting strontium titanate crystals provide linear characteristics. The process uses space charge potentials and depletion layer phenomena to achieve conduction and insulation

Aegerter, S.

Libby, W. F.

English

NASA Technical Reports Server

April 1970
	 Brief 70-10200 
NASA TECH BRIEF 
NASA Teèh Briefs are issued to summarize specific innovations derived from the U.S. space program, 
to encourage their commercial application. Copies are available to the public at 15 cents each 
from the Clearinghouse for Federal Scientific and Technical Information, Springfield, Virginia 22151. 
Ohmic Diode 
A process for producing linearly responding surface 
barrier diodes has been developed. In this process, 
hydrogen-fired, conducting strontium titanate 
(SrTiO 3 ) crystals are used to provide linear charac-
teristics. 
When crystals are flash heated to about 500° C in an 
inert atmosphere or vacuum, a thin surface layer is 
depleted of donors in the n-region, and becomes in-
sulating. A space charge is maintained in this layer 
by electron diffusion. During manufacture, one face 
of the crystal is lapped in order to remove this layer. 
The carrier density in the depletion layer is increased 
by applying a positive potential to the barrier side of 
the crystal, making it conductive. The current versus 
voltage characteristics in this mode is linear. When a 
reverse potential (negative at the barrier side) is 
applied, the surface layer of carriers is depleted, 
making it insulating. 
This innovation is novel in that the technique (pro-
cess) uses space charge potentials and depletion layer 
phenomena to achieve conduction and insulation.
Notes: 
1. This process may be of interest to those concerned 
with the design and development of electronic com-
ponents. 
2. Requests for further information may be directed 
to:
Technology Utilization Officer 
Headquarters 
National Aeronautics 
and Space Administration 
Washington, D.C. 20546 
Reference: B70-10200 
Patent status: 
Inquiries about obtaining rights for the commercial 
use of this invention may be made to NASA, Code 
GP, Washington, D.C. 20546. 
Source: W. F. Libby and S. Aegerter

Regents of the University of California

University of California Board of Patents

under contract to

NASA Headquarters
(H QN- 10534) 
\ 
Category 01 
t.
This document was prepared under the sponsorship of the National 
Aeronautics and Space Administration. Neither the United States 
Government nor any person acting on behalf of the United States
Government assumes any liability resulting from the use of the 
information contained in this document, or warrants that such use 
will be free from privately owned rights. -
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Ohmic diode

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