Storage device is applicable in memory systems and in high-resolution arrays for light-responsive image sensing. The device offers high yield in multiple arrays and allows charge release with light striking only the edge of a metal electrode

Kuper, A. B.

English

NASA Technical Reports Server

January 1970
	 Brief 70-10074 
NASA TECH BRIEF	
-I& 
NASA Tech Briefs are issued to summarize specific innovations derived from the U.S. space program, 
to encourage their commercial application. Copies are available to the public at 15 cents each 
from the Clearinghouse for Federal Scientific and Technical Information, Springfield, Virginia 22151. 
Improved Solid State Electron-Charge-Storage Device 
V	 V0- 
or—V 
.
A simple solid state charge-storage device that has 
been designed should find advantageous application 
in memory systems and in high-resolution arrays for 
light-responsive image sensing. The device can be 
fabricated without the use of diffusion techniques 
and offers high yield in multiple arrays. It allows 
charge release with light striking only the edge of a 
metal electrode, without penetrating to the interface 
of an insulator. This unique property simplifies electri-
cal contacting. The device is charged by applying a 
voltage pulse, and discharged by exposure to light or 
by a voltage pulse of opposite polarity. 
As shown in the sketch, the storage device consists 
of a semiconductor (e.g., n-type silicon) and a metal 
plate, with an insulator sandwiched between the two 
.omponents. The semiconductor must have* suitable 
electronic states on its surface, and the insulator 
must be thin and of high resistivity. When positive 
charging voltage, V, is applied to the sandwich, elec-
trons are drawn to the surface of n-type silicon (an 
opposite argument may be used for p-type silicon) 
and the semiconductor surface states acquire a charge 
Q. After the charging voltage is turned off (V =0), 
the surface states retain their electrons. These elec-
trons are in a metastable state and will discharge 
when exposed to light or when a suitable —V pulse is
applied. Discharge of the unit can be sensed by 
measuring the current in an external circuit; the 
current is determined by the amount of charge stored 
during the application of charging voltage. 
Note: 
The following documentation may be obtained 
from:
Clearinghouse for Federal Scientific 
and Technical Information 
Springfield, Virginia 22151 
Single document price $3.00 
(or microfiche $0.65) 
Reference: NASA C R-90046 (N 68-10098), 
Impurities and Interface States in the 
Si0 2 /Si System 
Patent status: 
Inquiries about obtaining rights for the commercial 
use of this invention may be made to NASA, Code 
GP, Washington, D.C. 20546.
Source: A. B. Kuper of

Case Western Reserve University

under contract to

NASA Headquarters
(HQN-10152)
Category 01 
This document was prepared under the sponsorship of the National 
Aeronautics and Space Administration. Neither the United States 
Government nor any person acting on behalf of the United States
Government assumes any liability resulting from the use of the 
information contained in this document, or warrants that such use 
will be free from privately owned rights.
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Improved solid state electron-charge-storage device

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