Integrated push-pull power amplifier fabricated on a chip of silicon has interdigitated power transistors and is hermetically encapsulated in a beryllia flat package. It provides current output greater than the nominal 10 amperes from an input current drive of 1 ampere

New, T. C.

English

NASA Technical Reports Server

March 1968	 Brief 68-10073 
NASA TECH BRIEF 
NASA Tech Briefs are issued to summarize specific innovations derived from the U.S. space program, 
to encourage their commercial application. Copies are available to the public at 15 cents each 
from the Clearinghouse for Federal Scientific and Technical Information, Springfield, Virginia 22151. 
New Microelectronic Power Amplifier 
An integrated push-pull power amplifier has been 
fabricated on a chip of silicon measuring 0.250x0.450 
inch. The power transistors are interdigitated, and 
occupy 80 percent of the area. The remaining 20 
percent of the area is occupied by the resistors and 
diodes. The device is hermetically encapsulated in a 
beryllia flat package. Beryllia was chosen over other 
ceramics because of its high thermal conductivity, high 
electrical resistivity, and high dielectric strength. 
Although the amplifier was required to provide a 
nominal output of 10 amperes from an input current 
drive of I ampere, it is capable of current outputs 
several times greater than the nominal value. The dc 
supply is 28 volts. Operating temperature is from 
—55° to +1500C. 
A limited number of the devices were fabricated and 
tested for electrical performance under severe environ-
mental conditions and were found to be satisfactory 
in all respects. Because of the small number tested, 
statistically significant data on reliability or mean 
time between failures are not available.
Notes: 
I. This power amplifier is believed to be a significant 
development in silicon integrated devices. 
2. The basic device should serve as a prototype for 
volume production in view of the large number of 
applications for push-pull power transistors for 
either switching or amplifying. The design provides 
flexibility for scaling either upward or downward 
depending on the power dissipation requirements. 
3. Additional details may be obtained from: 
Technology Utilization Officer 
Marshall Space Flight Center 
Huntsville, Alabama 35812 
Reference: B68-10073 
Patent status: 
No patent action is contemplated by NASA. 
Source: T. C. New 
of Westinghouse Electric Corporation 
under contract to 
Marshall Space Flight Center 
(MFS-l3621) 
Category 01 
This document was prepared under the sponsorship of the National	 Government assumes any liability resulting from the use of the 
Aeronautics and Space Administration. Neither the United States 	 information contained in this document, or warrants that such use 
Government nor any person acting on behalf of the United States 	 will be free from privately owned rights.
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New microelectronic power amplifier

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