Terminal burn-in or baking step time in the processing of planar silicon devices is extended to reduce their inversion tendencies. The collector-base junction of the device is also cyclically biased during the burn-in

Harris, R. E.

Meinhard, J. E.

English

NASA Technical Reports Server

June 1967	 Brief 67-10176 
NASA TECH BRIEF 
NASA Tech Briefs are issued to summarize specific innovations derived from the U.S. space program, 
to encourage their commercial application. Copies are available to the public at 15 cents each 
from the Clearinghouse for Federal Scientific and Technical Information, Springfield, Virginia 22151. 
Thermal and Bias Cycling Stabilizes Planar Silicon Devices 
The problem:	 Note: 
To reduce the inversion tendencies of planar silicon 	
Inquiries concerning this invention may be di- 
rected to: 
devices.  
The solution: 
Extend the time of the terminal burn-in or baking 
step carried out in the processing of the device (e.g., 
a planar transistor) and cyclically bias the collector-
base junction of the device during the burn-in period. 
Alternate application and removal of reverse bias dis-
charges and purges those ions which give rise to the 
problem of inversion and long-term drift during op-
eration of these devices. For MOS field effect transis-
tors, this processing step will reduce the surface-state 
density of inversion-causing ions and result in more 
stable threshold voltages.
Technology Utilization Officer 
Electronics Research Center 
575 Technology Square 
Cambridge, Massachusetts 02139 
Reference: B67-10176 
Patent status: 
Inquiries about obtaining rights for the commercial 
use of this invention may be made to NASA, Code 
GP, Washington, D.C. 20546. 
Source: J. E. Meinhard and R. E. Harris 
of North American Aviation, Inc. 
under contract to
Electronics Research Center
(ERC-48) 
Category 01 
This document was prepared under the sponsorship of the National 
Aeronautics and Space Administration. Neither the United States 
Government nor any person acting on behalf of the United States
Government assumes any liability resulting from the use of the 
information contained in this document, or warrants that such use 
will be free from privately owned rights.
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Thermal and bias cycling stabilizes planar silicon devices

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