A tunable two-frequency high-power diode laser system at 850 nm for terahertz (Thz)-wave generation by photomixing in low-temperature-grown GaAs photo-conductors has been developed. The difference frequency is obtained through a three laser system, where two lasers are locked to different orders of a Fabry-Perot cavity and a third is offset-locked to the first, The difference-frequency signal is generated by the offset laser and the other cavity-locked laser. The spectral purity of the beat note is better than 1 MHz. The maximum output power of -500 mW was obtained by using the master oscillator power amplifier (MOPA) technique, simultaneous injection of two seed frequencies with a single semiconductor optical amplifier. Here we report the generation of THz waves and spectroscopy of acetonitrile as proof of concept
