Carter, J C

Evans, A G R

Murray, D C

Redman-White, W

Siabi-Shahrivar, N

Defects present in semiconductor layers can lead to increased transistor low frequency noise. This paper reports on the noise performance degradation caused by modern complementary metal-oxide-semiconductor (CMOS) and bipolar-CMOS (BiCMOS) processing techniques, these being the rapid thermal annealing (RTA) of metal-oxide-semiconductor field effect transistors (MOSFETs) and the use of polysilicon emitters in bipolar transistors.A rise in both the bulk and oxide defect densities was thought to be responsible for the increased noise of RTA MOSFETs over conventionally annealed devices. A significant low frequency noise component was discovered to be present in poly-silicon-emitter transistors. This was thought to be due to the presence of SiO2 at the polysilicon-single-crystal interface

Murray, D.C.

Siabi-Shahrivar, N.

Evans, A.G.R.

Redman-White, W.

Carter, J.C.

Altrip, J.L.

Southampton (e-Prints Soton)

Increase of low frequency noise generating defects in today's CMOS/BiCMOS technologies

Increase of low frequency noise generating defects in today's CMOS/BICMOS technologies

Increase of low frequency noise generating defects in today's CMOS/BICMOS technologies

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Southampton (e-Prints Soton)