High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga 2 O 3 layer

Authors
Publication date
1 January 2019
Publisher

Abstract

Abstract is not available.

    Similar works

    Full text

    thumbnail-image

    Available Versions

    Knowledge Repository of SEMI,CAS

    redirect
    oaioai:ir.semi.ac.cn:172111/29835
    Last time updated on 16/09/2020