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半绝缘砷化镓EPR谱的异常退火特性
Authors
吴书祥
吴恩
+4 more
晏懋询
林兰英
葛惟锟
韩洪涛
Publication date
1 January 1989
Publisher
Abstract
中子辐照的水平生长出绝缘GaAs(样品A)、原生的和塑性形变的直法拉制半绝缘GaAs(样品C和D),都给出一组四线谱,但在不同的样品中呈现不同的退火特性:样品A经125℃三小时退火后,EPR谱有部分光猝灭效应,加长退火时间,光猝灭效应消失,表现出异常的退火特性;而样品C和D,则无光猝灭效应.中国科学引文数据库(CSCD)008582-58
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Institutional Repository of Peking University
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Knowledge Repository of SEMI,CAS
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Last time updated on 15/03/2019