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氮化镓缓冲层生长过程分析
Authors
刘祥林
林兰英
+4 more
汪度
汪连山
王晓晖
陆大成
Publication date
1 January 1999
Publisher
Abstract
研究了用金属有机物化学气相外延(MOVPE)在蓝宝石上生长氮化镓(GaN)缓冲层的生长速率随生长温度(500~600℃)的变化关系。用原位激光反射厚度测量方法,发现生长温度、三甲基镓和氨气的摩尔流量、以及源进入双层反应室的模式都对生长速率有影响。提出了生长过程的微观模型,解释了MOVPE生长GaN缓冲层过程中观察到的现象
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Last time updated on 15/03/2019