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快速热处理对应变InGaAs/GaAs单量子阱激光二极管电子发射和DX中心的影响
Authors
Ge Weikun
Wang J
+5 more
卢励吾
张砚华
徐仲英
徐遵图
王占国
Publication date
1 January 2002
Publisher
Abstract
研究分子束外延(MBE)生长的应变In_(0.2)Ga_(0.8)As/GaAs折射率梯度变化异质结单量子阱激光二极管的快速热处理(RTA)效应。结果表明,RTA移除了InCaAs/GaAs界面非辐射中心,提高77K光致发光效率和有源层电子发射。同时Al和Ga原子互扩散,也增加了AlGaAs波导层DX中心浓度。RTA处理后样品电流冲击老化实验证明DX中心浓度呈现出相应的增加。这表明DX中心可能是激光二极管性能退化的原因之一
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Last time updated on 15/03/2019