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钝化低温法生长多层InGaN量子点的结构和光学特性
Authors
刘祥林
朱勤生
+10 more
李昱峰
王占国
王晓晖
王秀凤
袁海荣
陆大成
陆沅
陈振
韩培德
黎大兵
Publication date
1 January 2003
Publisher
Abstract
采用一种新方法生长多层InGaN/GaN量子点,研究所生长样品的结构和光学特性。该方法采用了低温生长和钝化工艺,所以称之为钝化低温法。第一层InGaN量子点的尺寸平均宽度40nm,高度15nm,量于点密度为6.3×10^10/cm^2。随着层数的增加,量子点的尺寸也逐渐增大。在样品的PL谱测试中,观察到在In(Ga)As材料系中普遍观察到的量子点发光的温度特性——超长红移现象。它们的光学特性表
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Last time updated on 15/03/2019