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掺P、B对纳米Zn-O薄膜电学特性的影响
Authors
史利军
宋淑芳
+5 more
王文青
艾家和
许宏飞
赵金茹
韩晓英
Publication date
1 January 2002
Publisher
Abstract
现在普遍采用ITO薄膜(In_2O_3:Sn)作为太阳电池的窗口材料,但由于In资源的稀缺,使太阳能电池的成本增加。Zn-O是一种低成本材料,具有良好的电学、光学特性,因此可代替ITO薄膜作为窗口材料。由于ZnO/n-Si异质结太阳电池的转化效率为6.9%~8.5%,而ITO光电转换效率为12%~15%,采用液态源掺杂方法,取得较好效果,证实了掺P、B对纳米ZnO薄膜提高导电性是有效的。本文利用扫描俄歇探针等手段研究分析了掺P、B随热处理温度的变化对纳米Zn-O薄膜电学特性的影响。在研制过程中,对掺入P、B的纳米Zn薄膜,曾采用X射线衍射议进行分析,其结果未见P、B
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Last time updated on 15/03/2019