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(111)A InP衬底上MOCVD外延InGaAsP的表面形貌和光学特性
Authors
于丽娟
刘瑞东
+3 more
张福甲
芦秀玲
黄永箴
Publication date
1 January 2004
Publisher
Abstract
为了研究(111)衬底的特性以及实现等边三角形微腔激光器,利用金属有机化学气相淀积(MOCVD)研究了(111)A InP衬底上InGaAsP外延层的表面形貌和光学特性。考虑到(111)A InP衬底的悬挂键密度比较低,在生长过程中有意提高了V/III比。通过扫描电子显微镜(SEM)和光荧光(PL)谱分别研究了外延层的表面形貌和光学特性。实验发现,表面形貌和光学特性随V/III比和温度的变化非常大。最佳V/IlI比和温度分别为400和625℃
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Last time updated on 15/03/2019