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SOI热光开关调制区结构与速度和功耗关系的有限元法分析
Authors
余金中
刘敬伟
王小龙
陈少武
Publication date
1 January 2004
Publisher
Abstract
利用有限元法分析了调制区内二维温度场的静态和动态分布.结果表明,上包层SiO2厚度的减小,有利于开关速度的提高和功耗的减小.增加埋层SiO2的厚度或引入绝缘槽,能有效降低器件功耗,但开关时间随之增加.电极的尺寸对开关性能影响较小.如果采用全体硅材料制作光开关,开关速度能达到5μs,但功耗将增至0.92W
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Last time updated on 15/03/2019