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UHV/CVD外延生长SiGe/Si表面反应动力学
Authors
于卓
余金中
+6 more
成步文
李代宗
梁骏吾
王启明
雷震霖
黄昌俊
Publication date
1 January 2000
Publisher
Abstract
利用SiH_4和GeH_4作为源气体,对UHV/CVD生长Si_(1-x)Ge_x/Si外延层的表面反应机理进行了研究,通过TPD、RHEED等实验观察了Si(100)表面SiH_4的饱和吸附、热脱附过程,得出SiH_4的分解应该是每个SiH_4分子的4个H原子全部都吸附到了Si表面,SiH_4的吸附率正比于表面空位的4次方,并分析了GeH_4的表面吸附机制。在此基础上建立了UHV/CVD生长Si_(1-x)Ge_x/Si的表面反应动力学模型,利用模型对实验结果进行了模拟,二者符合得很好
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Last time updated on 15/03/2019