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Ge_xSi_(1-x)材料生长的改善
Authors
于卓
余金中
+4 more
成步文
李代宗
王启明
雷震霖
Publication date
1 January 2000
Publisher
Abstract
利用超高真空化学气相淀积(UHV/CVD)系统在650℃生长出表面光亮的GeSi单晶。在1200L/min分子泵与前级机械泵间串接450L/min分子泵,改善了生长环境。串接分子泵后生长的样品的X射线双晶衍射分析表明,外延层衍射峰半宽仅为198arcsec,且出现了Pendellosung干涉条纹,说明外延层结晶质量很好
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Last time updated on 15/03/2019