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非掺半绝缘磷化铟晶片的制备及其均匀性
Authors
林兰英
焦景华
+3 more
董宏伟
赵建群
赵有文
Publication date
1 January 2002
Publisher
Abstract
对高温退火非掺磷化铟(InP)制备的半绝缘晶片的电学性质和均匀性进行了研究,非掺低阻N型磷化铟晶片分别在纯磷气氛和磷化铁气氛下进行930 ℃、80h退火均可获得半绝缘材料。但在这两种条件下制备的两种50mm半绝缘晶片却呈现出不同的电学性质和均匀性。纯磷气氛下制备的磷化铟片的电阻率和迁移率分别达到10~6Ω·cm和1800cm~2/(V·s);而在磷化铁气氛下退火获得的半绝缘片的电阻率和迁移率分别高达10~7Ω·cm和3000cm~2/(V·s)以上。对这两种半绝缘片和原生掺铁磷化铟半绝缘片的PL-Mapping结果进一步比较表
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Last time updated on 15/03/2019