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图形衬底上硅区双离子束选择淀积Co研究
Authors
刘志凯
吴正龙
+4 more
姚振钰
张建辉
林兰英
秦复光
Publication date
1 January 1999
Publisher
Abstract
报道了利用质量分离低能双离子束淀积法在硅-氧化硅图形衬底上采用不同的工艺条件淀积钴(Co)离子,并生长硅化钴薄膜。扫描俄歇微探针(SAM)和X光电子能谱(XPS)测量结果表明,只在纯硅区探测到了硅化钴;而氧化硅区始终未见有钴的迹象。很好地实现了在图形衬底上钴离子的选择淀积和硅化钴薄膜的选择生长
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Last time updated on 15/03/2019