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nc-Si:H/c-Si量子点二极管中的共振隧穿特性分析
Authors
何宇亮
余明斌
+4 more
刘明
奚中和
彭英才
李月霞
Publication date
1 January 1998
Publisher
Abstract
采用常规PECVD工艺,在N型单晶硅(c-Si)衬底上沉积薄层纳米Si(nc-Si)膜,并进而制备了nc-Si:H/c-Si量子点二极管。在10~100K温度范围内实验研究了该结构的σ-V和I-V特性。结果指出,当反向偏压为-7~-9V时,无论在σ-V还是在I-V特性曲线上都观测到了近乎等间距的量子化台阶,此起因于在nc-Si:H膜中具有无序排布且粒径大小不一的Si微晶粒中,由于微晶粒中能级的量子化而导致的共振隧穿现象。如果进一步改进膜层生工艺,以制备出具有趋于有序排布、尺寸均匀和粒径更小的Si微晶粒的nc-Si:H膜,有可能实现更高温度范围内的共振隧穿
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