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SiC单晶的生长及其器件研制进展
Authors
李晋闽
林兰英
王引书
Publication date
1 January 1998
Publisher
Abstract
SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等物点。在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。该文综述了半导体SiC单晶和薄膜的生长及其器件研制的概况
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oai:ir.semi.ac.cn:172111/19191
Last time updated on 15/03/2019