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MBE生长温度对InGaAs/GaAs应变单量阱激光器性能的影响
Authors
孔梅影
曾一平
+4 more
朱世荣
李晋闽
李灵霄
王晓亮
Publication date
1 January 1997
Publisher
Abstract
采用分子束外延(MBE)技术,研制生长了InGaAs/GaAs应变单量子阱激光器材料,并研究了生长温度及界面停顿生长对激光器性能的影响。结果表明较高的InGaAs生长温度和尽可能短的生长停顿时间,将有利于降低激光器的闽值电流。所外延的激光器材料在250μm×500μm宽接触、脉冲工作方式下测量的闽电流匠典型值为160mA/CM~2。用湿法腐蚀制作的4μm条宽的脊型波导激光器,闽值电流为16nA,外微分量子效率为0.4mW/mA,激射波和工为976±2nm,线性输出功率为100mW
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Last time updated on 15/03/2019