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InGaAs/InAlAs多量子阱电吸收光调制器
Authors
俞谦
周钧铭
+8 more
孙可
庄岩
李德杰
王健华
王玉田
蔡丽红
金峰
黄绮
Publication date
1 January 1998
Publisher
Abstract
用国产MBE设备生长出与InP衬底晶格匹配的InGaAs/InAlAs多量子阱材料,并对材料的量子限制Stark效应及其与光偏振方向有关的各向异性电吸收特性进行研究。用该种材料制作的脊波导结构电吸收调制器在2.4V驱动电压下实现了20dB以上消光比,光3dB带宽达3GHz
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Last time updated on 15/03/2019