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InAs/GaAs亚单层结构的静压光谱研究
Authors
李伟
李国华
+3 more
汪兆平
王占国
韩和相
Publication date
1 January 1997
Publisher
Abstract
在15K下测量了InAs/GaAs亚单层结构的静压光致发光,静压范围为0~8GPa.常压下InAs层中重空穴激子的发光峰随InAs层厚的减小向高能移动,同时峰宽变窄,强度减小。其压力行为与GaAs基体的基本一致,表明量子阱(线、点)模型仍适用于InAs/GaAs亚单层结构。得到平均厚度为1/3单分子层的样品中由于附加的横向限制效应引起的电子和空穴束缚能的增加分别为23和42meV
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Last time updated on 15/03/2019