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GaAs/AlGaAs窄量子阱中激子二维特性的退化
Authors
徐仲英
袁之良
许继宗
郑宝真
Publication date
1 January 1995
Publisher
Abstract
用光荧光(PL)和时间分辨光谱(TRPL)技术研究了GaAs/AlGaAs窄量子阱结构中荧光上升时间τ_f和激子谱线半宽(FWHM)随阱宽的变化关系,发现在窄阱中,τ_f随阱宽的变化关系与宽阱是的情况恰恰相反,在窄阱中τ_f随着阱宽的减小而增加,归结为激子二维特性的退化导致声学声子对激子的散射作用减弱造成的。同时观测到窄阱中谱线半宽随着阱宽减小而增加,这也是因为激子特性由准二维向三维转化造成的
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Last time updated on 15/03/2019