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RTCVD工艺制备poly-Si薄膜太阳电池的研究
Authors
何少琪
寥显伯
+6 more
李仲明
潘广勤
王文静
盛殊然
赵玉文
邓礼生
Publication date
1 January 1998
Publisher
Abstract
报道了快速热化学气相沉积(RTCVD)工艺制备多晶硅(poly -Si)薄膜及电池的实验和结果。采用SiH_2Co_2作为原料气体,衬底温度为1030℃时,薄膜的生长速率为10nm/s。发现薄膜的平均晶粒度及载流子迁移率与衬底温度和材料有关。用该薄膜在未抛光重掺杂磷的硅衬底上制备1cm~2的p~+n结样品电池,无减反射涂层,其转换效率为4.54%(AM1.5,100mW/cm~2,25℃)
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Last time updated on 15/03/2019