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GaAs脊形量子线结构的MBE生长机理研究
Authors
周增圻
周帆
+6 more
张子莹
林耀望
潘昆
牛智川
王守武
祝亚芹
Publication date
1 January 1996
Publisher
Abstract
报道了非平面衬底上分子束外延生长GaAs脊形量子线结构的实验研究。已成功地在GaAs(001)刻蚀条形衬底上生长出了由(111)面和(113)面构成的两种脊形量子线结构。讨论了非平面衬底上MBE生长脊形结构的形成机制,认为在一定的生长条件下,脊形结构的表面取向是由两个原始交界面上生长速率的相对差异决定的;而生长速率的差异是由表面再构的不同决定的
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Last time updated on 15/03/2019