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MPS结构中的光生伏特现象
Authors
云峰
孔光临
廖显伯
王燕
Publication date
1 January 1996
Publisher
Abstract
报道了金属/多孔硅/结构(MPS)中光生伏特效应研究的最新结果,给出了该结构的光谱响应曲线,发现该结构在1100-350nm波长范围具有明显的光谱响应.还测量了开路电压随温度、光照波长及光照强度的变化关系,发现开路电压随温度的降低近似线性增加,其温度系数对于金/多孔硅结构约为2.0mV/K,对于铝/多孔硅结构约为2.8mV/K,与单晶硅及非晶硅太阳电池的温度系数相近,但MPS结构的开路电压随光强的增加不满足对数关系.结果表明,在MPS结构中金属/多孔硅肖特基结对光生伏特效应起了主要作用,而多孔硅/单晶硅异质结的作用是与此相反的
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Last time updated on 15/03/2019