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MOCVD和GSMBE生长Ga(0.5)In(0.5)P 外延层中有序结构的研究
Authors
孔梅影
孙殿照
+5 more
李建平
李晓兵
王占国
董建荣
陆大成
Publication date
1 January 1996
Publisher
Abstract
用MOCVD在(100)、GSMBE在(100)和(111)B GaAs上生长了GaInP外延层.PL测试表明,(100)衬底上GaIn PL 峰的能量比计算的带隙分别小43(GSMBE生长)和104meV(M(CVD生长).用Kurtz等人的模型对MOCVD和GSMBE生长的GaInP中有序度的不同进行了解释.并讨论了衬底晶向对GaInP中有序程度的影响
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Last time updated on 15/03/2019