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自组织生长InAs量子点发光的温度特性
Authors
吕振东
周均铭
+10 more
徐仲英
杨小平
王建农
王玉琦
葛惟昆
袁之良
许继宗
郑宝真
陈弘
黄绮
Publication date
1 January 1996
Publisher
Abstract
报道了InAs/GaAs自组织生长量子点结构中发光的温度特性.在12~150K温度范围内,实验测得的InAs激子发光能量随温度增加明显红移,其红移速率远大于InAs带隙的温度关系,而光谱宽度则明显减小.这些结果表明InAs量子点结构是一种强耦合系统,局域在InAs量子点中的载流子波函数会相互交迭、相互贯穿,从而增强了载流子的弛豫过程
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Last time updated on 15/03/2019