CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
GaNAs/GaAs中的激子局域化和发光特性
Authors
GE Wei-Kun
徐仲英
罗向东
谭平恒
Publication date
1 January 2005
Publisher
Abstract
通过多种光谱手段研究了GaNAs量子阱和体材料中的局域态和非局域态的不同光学特性.在超短激光脉冲激发下,第一次在GaNAs/GaAs量子阱发光光谱中,观察到非局域激子发光.选择激发光谱表明,局域中心主要聚集在GaNAs、GaAs异质结界面.在低N含量的GaNAs体材料发光光谱中,除了与N相关的局域态发光外,也发现发光特性完全不同的GaNAs合金态发光.这些结果为理解Ⅲ-V-N族半导体的异常能带特性具有十分重要的意义
Similar works
Full text
Available Versions
Knowledge Repository of SEMI,CAS
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:ir.semi.ac.cn:172111/17103
Last time updated on 15/03/2019