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大尺寸InAs/GaAs量子点的静压光谱
Authors
丁琨
方再利
+6 more
李国华
牛智川
王晓东
苏付海
马宝珊
骆军委
Publication date
1 January 2005
Publisher
Abstract
在低温15K和0~9GPa范围内对厚度为7.3nm、横向尺寸为78nm的自组织InAs/GaAs量子点进行了压力光谱研究.观测到大量子点的基态与第一激发态发光峰,其压力系数只有69和72meV/GPa,比小量子点的压力系数更小.基于非线性弹性理论的分析表明失配应变与弹性系数随压力的变化是大量子点压力系数小的主要原因之一.压力实验结果还表明大量子点的第一激发态发光峰来源于电子的第一激发态到空穴的第一激发态的跃迁
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Last time updated on 15/03/2019