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GaN蓝光材料新型ZnO/Si外延衬底的溅射沉积
Authors
姚振钰
汤兆胜
范正修
贺洪波
Publication date
1 January 2000
Publisher
Abstract
采用常规磁控溅射方法,通过优化工艺,在Si(100),Si(111)多种基片上沉积ZnO薄膜。利用透射电镜(TEM)、X射线衍射(XRD)和X射线摇摆曲线(XRC),对ZnO薄膜的微区形貌、结晶情况、C轴择优取向进行了详细的测试分析。结果表明,所制备的ZnO薄膜具有理想的结构特性,大多数样品测得ZnO(002)晶面XRC的半高宽(FWHM)1°左右,最小值达0.353°,优于目前国内外同类研究的最佳结果2°。并对ZnO/Si(100)与ZnO/Si(111)衬底的结果进行了比较和讨论
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Last time updated on 15/03/2019