CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
GaAs基短周期InAs/GaSb超晶格红外探测器研究
Authors
周志强
孙维国
+6 more
彭震宇
牛智川
许应强
郝瑞亭
郭杰
鲁正雄
Publication date
1 January 2009
Publisher
Abstract
采用分子束外延(MBE)方法,在(001)GaAs衬底上生长了短周期Ⅱ型超晶格(SLs):InAs/GaSb (2ML/8ML)和InAs/GaSb (8ML/8ML).从X射线衍射(HRXRD)中计算出超晶格周期分别为31.2(A)和57.3(A).室温红外透射光谱表明两种超晶格结构在短波2.1μm和中波5μm处有明显吸收.通过腐蚀、光刻和欧姆接触,制备了短波和中波的单元光导探测器.在室温和低温下进行光谱响应测试和黑体测试,77K下,50%截止波长分别为2.1μm和5.0μm,黑体探测率D~·_(bb)均超过2×10~8cmHz~(1/2)/W.室温下短波探测器D~·_(bb)超过10~8cmHz~(1/2)/W
Similar works
Full text
Available Versions
Knowledge Repository of SEMI,CAS
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:ir.semi.ac.cn:172111/15823
Last time updated on 15/03/2019