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UHV/CVD法生长硅基低位错密度厚锗外延层
Authors
余金中
周志文
+10 more
周笔
张永
李成
林桂江
汪建元
王启明
蔡坤煌
蔡志猛
赖虹凯
陈松岩
Publication date
1 January 2008
Publisher
Abstract
采用超高真空化学气相淀积系统,以高纯Si_2H_6和GeH_4作为生长气源,用低温缓冲层技术在Si(001)衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530″和5.5cm~(-1),具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm~(-2).可用于制备Si基长波长集成光电探测器和Si基高速电子器件
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Last time updated on 15/03/2019