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PLD工艺制备高质量ZnO/Si异质外延薄膜
Authors
王维维
胡礼中
赵杰
Publication date
1 January 2009
Publisher
Abstract
采用脉冲激光沉积工艺在不同条件下以Si(111)为衬底制备了Zno薄膜.通过对不同氧压下(0~50Pa)沉积的样品的室温PL谱测试表明,氧气氛显著地提高了薄膜的发光质量,在50Pa氧气中沉积的ZnO薄膜具有最强的近带边UV发射.XRD测试说明在氧气氛中得到的薄膜结晶质量较差,没有单一的(002)取向.利用-低温(500℃)沉积的ZnO薄膜作缓冲层,得到了高质量的ZnO外延膜.与直接沉积的ZnO膜相比,生长在缓冲层上的ZnO膜展现出规则的斑点状衍射花样,而且拥有更强的UV发射和更窄的UV峰半高宽(98meV).对不同温度下沉积的缓冲层进行了RHEED表征,结果表明,在600~650℃之间生长缓冲层,有望进一步改善ZnO外延膜的质量
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Last time updated on 15/03/2019