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带有A1N插入层的GaN薄膜的结构及应变研究
Authors
丁志博
侯利娜
+5 more
周生强
姚淑德
王坤
王建峰
赵强
Publication date
1 January 2006
Publisher
Abstract
利用金属有机化学汽相沉积(MOCVD)法在硅衬底上生长具有AIN插入层的GaN外延膜,采用高分辨X射线衍射(HRXRD)和卢瑟福背散射/沟道(RBS/Channeling)技术研究分析其结构和应变性质。从RBS<0001>沟道谱可知,该外延膜具有良好的结晶品质,χ_(min)=2.5%。利用不同方位角上XRD摇摆曲线测量,可得出GaN(0001)面与Si(111)面之间的夹角β=1.379°。通过对GaN(0002)和GaN(10(1-bar)5)衍射面的θ-2θ扫描,可以得出GaN外延膜在垂直方向和水平方向的平均弹性应变分别为-0.10%±0.02%和0.69%±0.09%。通过对{10(1-bar)0}面内非对称轴RBS角扫描可得出由弹性应变引起的四方畸变e_T在近表面处为0.35%±0.02%。外延膜弹性性质表明GaN膜在水平方向具有张应力(e~〃>0)、在垂直方向具有压应力(e~⊥<0),印证了XRD的结果。四方畸变是深度敏感的,通过对不同深度的四方畸变计算可知,A1N插入层下面的GaN外延膜弹性应变释放速度比A1N层上面的GaN层弹性应变释放快,说明A1N层的插入缓解了应变释放速度
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Last time updated on 15/03/2019