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Si衬底上Ge材料的UHVCVD生长
Authors
成步文
曾玉刚
+5 more
王启明
罗丽萍
薛春来
薛海韵
韩根全
Publication date
1 January 2009
Publisher
Abstract
采用超低温Buffer层技术在Si衬底上生长出了质量优良的厚Ge材料,材料的穿透位错密度为1×10~5 cm~(-2).原子力显微镜测试表明表面均方根粗糙度为0.33nm,卢瑟福背散射谱表明Ge的沟道产额低达3.9%,透射电镜分析则表明应变的弛豫主要是通过在Si与Ge的界面处形成失配位错来实现的
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Last time updated on 15/03/2019