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深能级缺陷对半绝缘InP材料电学补偿的影响
Authors
杨俊
王博
+4 more
苗杉杉
董志远
赵有文
邓爱红
Publication date
1 January 2007
Publisher
Abstract
对铁掺杂和高温退火非掺杂磷化铟制备的两种半绝缘材料的电学补偿和深能级缺陷进行了分析和比较.根据热激电流谱(TSC)测得的深能级缺陷结果,分析了这两种半绝缘InP材料中深能级缺陷对电学补偿的影响.在掺铁半绝缘InP材料中,由于存在高浓度的深能级缺陷参与电学补偿。降低了材料的补偿度和电学性能.相比之下,利用磷化饫气氛下高温退火非掺InP获得的半绝缘材料的深能级缺陷浓度很低,通过扩散掺入晶格的铁成为唯一的深受主补偿中心钉扎费米能级,材料表现出优异的电学性质.在此基础上给出了一个更为广泛的半绝缘InP材料的电学补偿模型
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Last time updated on 15/03/2019