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GaAs基GaSb体材料及InAs/GaSb超晶格材料的MBE生长
Authors
任正伟
周志强
+3 more
徐应强
牛智川
郝瑞亭
Publication date
1 January 2007
Publisher
Abstract
采用分子束外延方法在GaAs(100)衬底上生长GaSb体材料,以此GaSb为缓冲层生长了不同InAs厚度的InAs/GaSb超晶格,其10K光致发光谱峰值波长在2.0~2.6 μm.高分辨透射电子显微镜观察证实超晶格界面清晰,周期完整
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Last time updated on 15/03/2019