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生长温度对InAs/GaSb超晶格晶体结构和表面形貌的影响
Authors
周志强
孙维国
+7 more
彭震宇
牛智川
许应强
郝瑞亭
郭杰
陈慧娟
鲁正雄
Publication date
1 January 2008
Publisher
Abstract
采用分子束外延(MBE)技术,在GaSb(100)衬底上外延生长InAs(4ML)/GaSb(8ML)超晶格(SLs)。研究了生长温度(400~440℃)对超晶格晶体结构和表面形貌的影响。结果表明,420℃生长的超晶格结构完整和表面粗糙度最小,其荧光光谱(PL)峰值波长在约2.54μm处,响应光谱50%截止波长在约2.4μm处。通过控制快门顺序形成InSb和混合两种界面,并发现生长温度强烈影响混合界面InAs/GaSb超晶格结构和表面形貌,而对InSb界面超晶格的影响较小
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Last time updated on 15/03/2019