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Ge组分对SiGe HBT直流特性的影响
Authors
康俊勇
张永
+5 more
成步文
李成
王启明
赖虹凯
陈松岩
Publication date
1 January 2008
Publisher
Abstract
制作了基区Ge组分分别为0.20和0.23的多发射极指数双台面结构SiGe异质结双极型晶体管(HBT).实验结果表明,基区Ge组分的微小增加,引起了较大的基极复合电流,但减小了总的基极电流,提高了发射结的注入效率,电流增益成倍地提高.Ge组分从0.20增加到0.23,HBT的最大直流电流增益从60增加到158,提高了约2.6倍
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Last time updated on 15/03/2019