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带有锥形增益区14xxnm量子阱激光器的研制
Authors
张敬明
张洪波
+4 more
朱晓鹏
王国宏
韦欣
马骁宇
Publication date
1 January 2005
Publisher
Abstract
利用MOCVD生长了14xxnm AlGaInAs/AlInAs/InP应变量子阱外延片.采用带有锥形增益区脊型波导结构和普通条形脊型波导结构在相同的实验条件下制作800μm腔长激光器管芯,在相同的驱动电流下前者可以获得更高的输出光功率,而且P-Ⅰ曲线线性度较好、饱和电流高.1200μm腔长带有锥形增益区脊型波导结构管芯功率达到500mW,饱和电流3A以上,峰值波长1460nm,远场发散角为39°×11°
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Last time updated on 15/03/2019