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高击穿电压AlGaN/GaN HEMT电力开关器件研究进展
Authors
张明兰
杨瑞霞
+3 more
王晓亮
胡国新
高志
Publication date
1 January 2010
Publisher
Abstract
作为第三代宽禁带半导体材料的典型代表, GaN材料在各个应用领域的研究工作都受到了高度的重视。概述了基于AlGaN/GaNHEMT结构的新型高压、高频、低损耗电力开关器件的最新研究进展。从器件的结构特征入手, 详细介绍了改善器件击穿特性的途径、高频开关特性的研究情况、Si衬底上AlGaN/GaNHEMT结构材料的生长、增强型器件的制备技术和功率集成电路的研究等几个国际上的热点问题。最后, 对该项研究面临的问题及未来的发展趋势做了展望
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Last time updated on 10/07/2018