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SiO_x:Er薄膜材料光致发光特性的研究
Authors
徐骏
沈海波
+3 more
王启明
郭亨群
陈坤基
Publication date
1 January 2010
Publisher
Abstract
采用射频磁控反应溅射技术,以Er_2O_3和Si为靶材,制备了SiO_x:Er薄膜材料,在不同温度和不同时间下进行退火处理,室温下测量了样品的光致发光(PL)谱,观察到Er~(3+)在 1 530, 1 542和1 555 nm处波长的发光,发现退火能明显增强Er~(3+)的发光. 研究了退火温度和时间对SiO_x:Er薄膜光致发光的影响,发现Er_2O_3与Si面积比为1:1时, 1 100℃下20 min退火为样品的最佳退火条件. 采用XRD和材料光吸收测试对样品结构和光学性质进行了研究,得到样品中Si晶粒大小为1.6 nm,样品的光学带隙为1.56 eV. 对3种不同Er_2O_3与Si面积比的SiO_x:Er薄膜材料进行研究,得到Er_2O_3与Si面积比为1:3为样品的最佳配比,对薄膜材料发光现象进行了探
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Last time updated on 17/10/2017