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在Si衬底上分子束外延生长GeSn合金的方法
Authors
左玉华
张广泽
+7 more
成步文
汪巍
王启明
白安琪
胡炜玄
苏少坚
薛春来
Publication date
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Abstract
本发明提供一种在Si衬底上分子束外延生长GeSn合金的方法,包括如下步骤:步骤1:在Si衬底上生长一层第一Ge材料层;步骤2:在第一Ge材料层上生长一层第二Ge材料层;步骤3:在第二Ge材料层上生长一层第一GeSn合金层;步骤4:在第一GeSn合金层上生长一层第二GeSn合金层,完成材料的生长
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Last time updated on 17/10/2017